| PART |
Description |
Maker |
| IS42S16100C1-7B IS42S16100C1-7BI IS42S16100C1-7BL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IC42S32200L IC42S32200 IC42S32200_L-6B IC42S32200_ |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Circuit Systems
ICSI
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
| IS42S32200B-6T IS42S32200B-6TI IS42S32200B-6TL IS4 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
| IS42S16100A1 IS42S16100 IS42S16100-7T IS42S16100-1 |
512K WORDS X 16 BITS X 2 BANKS (16-MBIT) SYNCHRONOUS DYNAMIC RAM
16mb Synchronous Dynamic RAM: 512kx16x2
|
Integrated Silicon Solution, Inc
ISSI
|
| IS42S16128 |
128K words x 16 Bits x 2 Banks SDRAM
|
ISSI
|
| EDE1108AASE-6E-E EDE1104AASE EDE1104AASE-4A-E EDE1 |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.
|
ELPIDA[Elpida Memory]
|
| TC59LM814CFT-60 TC59LM806CFT-50 TC59LM806CFT-55 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TOSHIBA[Toshiba Semiconductor]
|
| K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
| EBD11ED8ABFB-7B EBD11ED8ABFB EBD11ED8ABFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 72 bits/ 2 Banks)
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks)
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words × 72 bits, 2 Banks)
|
ELPIDA[Elpida Memory]
|
| W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
